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IRF820AS especificación: HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A
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IRF820AS Datasheet y Espec
Fabricante : IR
Embalaje : DDPak
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 146 KB
Aplicación : HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A
IRF820AS PDF Download