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IRF830AS especificación: HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A
IRF830AS similares
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IRF830AS Datasheet y Espec
Fabricante : IR
Embalaje : DDPak
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 170 KB
Aplicación : HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A
IRF830AS PDF Download