IRF1010N especificación: HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.

IRF1010N similares

IRF1010E
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
IRF1010EL
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
IRF1010ES
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
IRF1010N
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.
IRF1010NL
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.
IRF1010NS
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.
IRF1104
- HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.009 Ohm, ID = 100A.
IRF130
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =100V, RDS(on) = 0.18 Ohm, ID = 14A

IRF1010N Datasheet y Espec

Fabricante : IR

Embalaje :

Pins : 3

Temperatura : Min -55 °C | Max 175 °C

Tamaño : 232 KB

Aplicación : HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.