IRF1010NS especificación: HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.

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IRF1010NS Datasheet y Espec

Fabricante : IR

Embalaje : DDPak

Pins : 3

Temperatura : Min -55 °C | Max 175 °C

Tamaño : 160 KB

Aplicación : HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.