IRF1310NS especificación: HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A.

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IRF1310NS Datasheet y Espec

Fabricante : IR

Embalaje : DDPak

Pins : 3

Temperatura : Min -55 °C | Max 175 °C

Tamaño : 171 KB

Aplicación : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A.